Thông tin chuyên gia
Quá trình Công tác
Thời gian
Cơ quan
Vị trí
2012 - 2015
Nghiên cứu sau tiến sĩ, Đại học Warwick
2015 - 2018
Kỹ sư phát triển, IQE plc.
2018 - nay
Giảng viên Viện Nghiên Cứu và Đào Tạo Việt Anh, Đại học Đà Nẵng
Đề tài
| Tên đề tài | Cấp | Vai trò | Năm |
|---|
Tạp chí
| Tên bài báo | Loại | Tạp chí | Tác giả |
|---|---|---|---|
| Hybrid III-V/SiGe solar cells grown on Si substrates through reverse graded buffers. | Article | Solar Energy Materials and Solar Cells. No: 0927-0248. Pages: 110246. Year 2020. | Authors: Pablo Caño, Manuel Hinojosa, Huy Nguyen, Aled Morgan, David Fuertes Marrón, Iván García, AndrewJohnson, Ignacio Rey-Stolle |
| Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges. | Presentations | IEEE 46th Photovoltaic Specialists Conference. Pages: 1444-1451. Year 2019. | Authors: I. García, M. Hinojosa, I. Lombardero, L. Cifuentes, I. Rey-Stolle, C. Algora, H. Nguyen, S. Edwards, A. Morgan, A. Johnson |
| Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates. | Presentations | IEEE 46th Photovoltaic Specialists Conference. Pages: 2513-2518. Year 2019. | Authors: P. Caño, M. Hinojosa, L. Cifuentes, H. Nguyen, A.Morgan, D.F. Marron, I. Garcia, A. Johnson, I. Rey-Stolle |
| Space III-V Multijunction Solar Cells on Ge/Si virtual substrates. | Presentations | European Space Power Conference. Pages: 1-6. Year 2019. | Authors: I. García, I. Rey-Stolle, M. Hinojosa, I. Lombardero, L. Cifuentes, C. Algora, H. Nguyen, A. Morgan, A. Johnson |
| Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition. | Presentations | 15th International Conference on Ultimate Integration on Silicon. Pages: 121-124. Year 2014. | Authors: Van Huy Nguyen, M Myronov, P Allred, J Halpin A Dobbie, DR Leadley |
| High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. | Article | Journal of Applied Physics. No: 15. Pages: 154306. Year 2013. | Authors: Van Huy Nguyen, A Dobbie, M Myronov, DR Leadley |
| Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. | Article | Journal of Physics: Conference Series. No: 471. Pages: 012031. Year 2013. | Authors: Y Qiu, VH Nguyen, A Dobbie, M Myronov, T Walther |
| Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process. | Article | Applied Physics Express. No: 5. Pages: 071301. Year 2012. | Authors: Andy Dobbie, Van Huy Nguyen, Maksym Myronov, Terry E Whall, Evan HC Parker, David R Leadley |
| Thermal stability of thin compressively strained ge surface channels grown on relaxed si0. 2ge0. 8 reverse-graded buffers. | Article | Journal of the Electrochemical Society. No: 159. Pages: H490-H496. Year 2012. | Authors: A Dobbie, Van Huy Nguyen, RJH Morris, Xue-Chao Liu, M Myronov, DR Leadley |
| Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. | Article | Solid State Electronics. No: 60. Pages: 42-45. Year 2011. | Authors: Xue-Chao Liu, M Myronov, A Dobbie, Van H Nguyen, DR Leadley |
| Highly strained Si epilayers grown on SiGe/Si (100) virtual substrate by reduced pressure chemical vapour deposition. | Article | physica status solidi c. No: 8. Pages: 952-955. Year 2011. | Authors: M Myronov, VA Shah, A Dobbie, Xue‐Chao Liu, Van H Nguyen, DR Leadley, EHC Parker |
| Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si (100) heterostructure by x-ray diffraction and reflectivity. | Article | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. No: 29. Pages: 011010. Year 2011. | Authors: Xue-Chao Liu, M Myronov, A Dobbie, Van H Nguyen, DR Leadley |
| High quality strained ge epilayers on a si0. 2ge0. 8/ge/si (100) global strain-tuning platform. | Article | Electrochemical and Solid State Letters. No: 13. Pages: 388. Year 2010. | Authors: Maksym Myronov, Andy Dobbie, Vishal A Shah, Xue-Chao Liu, Van H Nguyen, David R Leadley |
| Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. | Article | Semiconductor Science and Technology. No: 25. Pages: 085007. Year 2010. | Authors: A Dobbie, M Myronov, Xue-Chao Liu, Van H Nguyen, EHC Parker, DR Leadley |
| Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD. | Presentations | International Silicon-Germanium Technology and Device Meeting. Pages: 1-2. Year 2012. | Authors: Van Huy Nguyen, A Dobbie, M Myronov, DR Leadley |
| Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates. | Article | Thin Solid Films. No: 520. Pages: 3222-3226. Year 2012. | Authors: Van Huy Nguyen, A Dobbie, M Myronov, DJ Norris, T Walther, DR Leadley |
| Investigation of the Thermal Stability of Strained Ge Layers Grown at Low Temperature by Reduced-pressure Chemical Vapour Deposition on Si0.2Ge0.8 Relaxed Buffers. | Presentations | MRS Online Proceedings Library Archive. Pages: online. Year 2010. | Authors: Andy Dobbie, Maksym Myronov, Xue-Chao Liu, Van Huy Nguyen, Evan Parker, David Leadley |
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